Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5853491A · kind A · utility
17Cited by
12References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 27, 1997 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Mar 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A complex building agent, such as EDTA is added in a predetermined concentration to the "SC 1" step of a "PIRANHA-RCA" cleaning sequence for reducing the metal contamination left on the surface of a silicon wafer after completion of this cleaning step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.