Method of manufacturing a surface-emitting laser
US5854088A · kind A · utility
15Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: PA1 forming an undercut layer, PA1 at least one growth step on the undercut layer, PA1 forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, and PA1 controlled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.