Semiconductor device manufacturing method
US5854120A · kind A · utility
8Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1996 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Dec 17, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/92
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.