Low temperature sintering microwave dielectric composition
US5854160A · kind A · utility
1Cited by
3References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 1997 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Jun 10, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/462
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A low temperature sintering microwave dielectric composition which can be sintered at a temperature of below 1250.degree. C. The composition includes a composition of xLiO.sub.1/2 --yCaO--.sub.z SmO.sub.3/2 --wTiO.sub.2 --qBO.sub.3/2 where 13.00.ltoreq.x.ltoreq.16.00, 11.00.ltoreq.y.ltoreq.13.00, 18.00.ltoreq.z.ltoreq.21.00, 45.00.ltoreq.w.ltoreq.51.00 and 0<q.ltoreq.12.0 wherein the numeric values are based on mol % with respect to the entire composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.