Preparation of nucleated silicon surfaces
US5854495A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1996 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Mar 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure is disclosed for growing semiconductor surfaces. A substrate such as a single crystal silicon substrate is treated by electrical biasing in the presence of a carbon-containing plasma to cause nucleation of the surface. By direct observation using atomic force microscopy (AFM), a nucleated surface consisting of a thin film of mutually parallel, quadrilateral carbon-containing platelets was seen to develop on the substrate. An optimum nucleated surface was determined to be substantially covered with such platelets whose slope relative to the substrate was less than 5.degree.. Such a surface can serve as a template for growing semiconductor films, particularly of diamond, of well defined structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.