Materials for semiconductor device assemblies
US5855821A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1995 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | Dec 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15165
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A composition suitable for use as an underfill for an interconnection between a semiconductor device and a substrate, as a semiconductor device encapsulant, a dam, an adhesive for direct chip attachment, and as an electrical connection for semiconductor device and a substrate. The composition contains about 40 to 90 wt. % of an electrically conductive or non-conductive filler and a cyanate ester and epoxy resin component. The cyanate ester/epoxy resin component comprises about 10 to 70 wt. % cyanate ester material, about 30 to 90 wt. % of epoxy resin, about 0.1 to 1.5 wt. % metal chelate/amine solid curing catalyst and about 0.1 to 5 wt. % of a coupling agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.