Process for production of semiconductor substrate
US5856229A · kind A · utility
112Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.