Programmable thin film filament resistor and method of constructing same
US5856775A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 1996 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | Jun 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes a programmable thin film filament resistor and method of constructing same. The finished construction includes: a core member of hydrogenated amorphous silicon; upper and lower electrodes made of a barrier metal such as molybdenum or tungsten applied to the upper and lower surfaces of the core member; and, backing layers, typically made of aluminum, applied to the outside surfaces of the electrodes. An insulator may be added to the upper surface of the core member. A programming voltage is applied to the electrodes, creating a discharge path between the upper and lower electrodes. When a critical current is reached, a filament is formed as the aluminum of the backing layers, the barrier metal of the electrodes, and the amorphous silicon are fused together. The result is a filament resistor with linear properties within a defined operating range. In an alternate embodiment, the upper and lower electrodes are overlapped in an alternating pattern, creating fusion zones. When the programming voltage is applied, an electric field forms within the fusion zones which creates multiple filaments with linear resistive qualities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.