Cleaning method for peeling and removing photoresist
US5858106A · kind A · utility
59Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Jan 10, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B2203/002
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A cleaning method for peeling and removing photoresists from a semiconductor by applying ultrasound to a cleaning solution comprising a mixture of an organic solvent diluted with pure water and halogenated alkali metal salts, hydrofluoric acid, or ammonium fluoride. The cleaning method removes organic film such as a photoresist or the like at room temperature, not by dissolving, but rather by peeling. The cleaning liquid does not degrade over a long period of time and, moreover, has a strong cleaning effect yet chemical vapors and water vapors are essentially not generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.