Method for forming photoresist patterns
US5858590A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Oct 24, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming photoresist patterns by performing a photolithograpy process by the unit of a predetermined number of wafers, wherein the photoresist patterns are formed under a condition that an exposure time taken to fore each of the photoresist patterns is predetermined taking into consideration a variation in reflection factor, on the basis of the following equation: EQU Z=X+{(r-a).times.(Y-X)/(.beta.-.alpha.)} where, "T" represents a reference thickness corresponding to a thickness of a photoresist film to be patterned to form a corresponding one of the photoresist patterns, exhibiting a minimum reference factor or a maximum reference factor, "T'" a thickness limit more than the reference thickness (T), ".alpha." a reference reflection factor at the reference thickness (T), ".beta." a reflection factor limit at the thickness limit (T'), "r" a varied reflection factor, "X" a reference exposure time at the reference reflection factor (.alpha.), "Y" an exposure time limit at the reflection factor limit (.beta.), and "Z" the varied exposure time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.