Semiconductor device and method for manufacturing the same
US5858620A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Jan 24, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.