Conductive plane beneath suspended microstructure
US5858809A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Mar 18, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for providing a conductive plane beneath a suspended microstructure. A conductive region is diffused into a substrate. A dielectric layer is added, covering the substrate, and then removed from a portion of the conductive region. A spacer layer is deposited over the dielectric and exposed conductive region. A polysilicon layer is deposited over the spacer layer, and formed into the shape of the suspended microstructure. After removal of the spacer layer, the suspended microstructure is left free to move above an exposed conductive plane. The conductive plane is driven to the same potential as the microstructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.