Chemical mechanical polishing slurry for metal layers and films
US5858813A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1996 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | May 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects. Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.