Hybrid chip and method therefor
US5858814A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1996 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Dec 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1305
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hybrid chip having at least two different types of semiconductor devices co-located on a common substrate, and a method therefor, are disclosed. The devices have different multiple epitaxial layer structures so that each different type of device is first grown on a separate appropriately-selected substrate, and then attached to the common substrate. According to the method, a first device is attached to the common substrate using flip-chip bonding methods. Flip-chip bonding involves attaching the device and the substrate at bonding pads, flowing a flowable hardener between the first device and the common substrate and allowing it to harden, and then removing the substrate upon which the first device was grown. The hardener is removed before attaching the second type of device via flip-chip bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.