Manufacturing method of electrode
US5858851A · kind A · utility
37Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1996 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Sep 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A titanium film and a titanium nitride film are sequentially formed on a polysilicon plug. Next, the titanium nitride film is oxidized to form an oxidized titanium nitride film. Thereafter, a lower electrode and a PZT film are formed. A diffusion barrier layer is prepared from the oxidized titanium nitride film and is oxidized before the lower electrode is formed. As a result, unlike in prior art, the diffusion barrier layer is not oxidized after the lower electrode is formed. Peel-off between the diffusion barrier layer and the lower electrode due to the oxidation is thus prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.