Diode and power converting apparatus
US5859446A · kind A · utility
65Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p.sup.+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor layer of an n.sup.- conductivity type for obtaining a large critical di/dt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.