Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
US5862022A · kind A · utility
98Cited by
3References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.