Monolithic integrated optical semiconductor component

US5862168A · kind A · utility

Assignee

• Alcatel Alsthom · BE

Inventors

• Michael Schilling · Stuttgart, DE
• Gert Laube · Stuttgart, DE

Key dates

• Filing date: Apr 25, 1997
• Grant date: Jan 19, 1999
• Expiry date: Apr 25, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3434
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Monolithic integrated optical semiconductor components with a buried ridge stripe waveguide (BRS) are used for optical communications. They contain active (AB) and passive (PB) waveguide regions. High absorption losses occur in passive waveguide regions with a buried ridge stripe waveguide, while passive waveguide regions with low-loss rib waveguides have reflections and leakage losses in the junction with the active waveguide regions. A semiconductor component (BE2) according to the invention has a buried ridge stripe waveguide (BRS) in active (AB) as well as passive (PB) waveguide regions, which is covered by a cap layer (DS). In addition the passive regions (PB) have a semi-insulating or undoped cladding layer (MS) between the ridge stripe waveguide (BRS) and the cap layer (DS). A process is furthermore indicated whereby a semiconductor component according to the invention can be manufactured.