Etching method and process for producing a semiconductor element using said etching method
US5863412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1996 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Oct 17, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching an object having a portion to be etched on the surface thereof, comprising a step of immersing said object in an electrolyte solution such that said object serves as a negative electrode; a step of arranging a counter electrode having a pattern corresponding to a desired etching pattern to be formed at said portion to be etched of said object in said electrolyte solution so as to maintain a predetermined interval between said counter electrode and said object, and a step of applying a direct current or a pulse current between said object and said counter electrode to etch said portion to be etched of said object into a pattern corresponding to said pattern of said counter electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.