Method for capturing gaseous impurities and semiconductor device manufacturing apparatus
US5863602A · kind A · utility
18Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1997 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | May 23, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B17/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Before an HSG-Si film is formed, silicon films are pre-coated on the inner wall of a reaction chamber (12) for forming the HSG-Si film on a wafer (14) and in a boat (25) which is used for accommodate and support the wafer (14) in the reaction chamber (12), and then the wafer (14) is fed into the pre-coated reaction chamber (12) to form the HSG-Si film in the state that impurities on the wafer (14) have been removed. By pre-coating the silicon films, the impurities such as water, oxygen, hydrocarbon and organic materials can be removed, and a surface area increase rate of the HSG-Si film formed on the wafer (14) can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.