Method of enhancing the c-axis perpendicular orientation of barium hexaferrite thin films and barium hexaferrite thin film recording media produced thereby
US5863661A · kind A · utility
2Cited by
2References
17Claims
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Key dates
| Filing date | Apr 17, 1996 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Apr 17, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/90
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of making c-axis perpendicularly oriented barium hexaferrite thin films by the crystallization of amorphous barium hexaferrite on a platinum underlayer is provided. Using a thin underlayer of platinum, barium hexaferrite films can be deposited by conventional rf diode or magnetron sputtering. Such deposition may be performed at room temperature, after which excellent c-axis perpendicular orientation can be achieved by rapid ex-situ annealing. The c-axis perpendicular orientation can also be achieved through in-situ annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.