Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips
US5863813A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 20, 1997 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Aug 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductive material wafer includes, a) providing a semiconductive material wafer having integrated circuitry fabricated within discrete die areas on the wafer, the discrete die areas having bond pads formed therewithin; b) cutting at least partially into the semiconductive material wafer about the die areas to form a series of die cuts, the cuts having edges; c) depositing an insulative material over the wafer and to within the cuts to at least partially cover the cut edges and to at least partially fill the cuts with the insulative material; d) removing the insulative material from being received over the bond pads and leaving the insulative material within the die cuts; and e) after the removing, cutting into and through the insulative material within the die cuts and through the wafer. A semiconductor chip includes an outer surface having conductive bond pads proximately associated therewith. Side edges extend from the outer surface. An insulating material layer is adhered to at least a portion of the side edges and not formed over the bond pads. The insulative material layer can be continuous and adhered to only a portion of the outer surface and ad…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.