Method of manufacturing semiconductor device
US5863837A · kind A · utility
14Cited by
2References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is related to a method of manufacturing a semiconductor including a MOSFET. The method comprises a step of forming an opening in a first insulating layer covering a second insulating layer and a surface of semiconductor substrate, so that the second insulating layer covering a gate electrode, and a surface of a source region and a drain region are exposed, a step of burying a conductive material in the opening, and a step of etching the conductive material so that a surface of the second insulating layer is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.