High current ion implanter and method of ion implant by the implanter
US5864143A · kind A · utility
4Cited by
1References
4Claims
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Key dates
| Filing date | Jan 29, 1997 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Jan 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus and process for ion implantation which eliminates the deterioration of device characteristics in the ion implantation process to a trench capacitor of a DRAM and increases the beam current without deteriorating the device characteristics. A high current ion implanter includes an implantation chamber, and arranged in the following order: a bias plate, a secondary electron implantation cylinder and an extension cylinder. The extension cylinder is adjacent to the implantation chamber, held to ground potential, and has a length of 10 to 25 cm..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.