Multiple layer acoustical structures for thin-film resonator based circuits and systems
US5864261A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 1997 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Jan 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/589
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A stacked thin film device structure grown on a substrate, the resonator structure comprising a thin film device comprising at least one piezoelectric crystal layer sandwiched between metallic electrodes, and constructed to have an acoustic response in a given frequency range, and an acoustical stack disposed between and joining the thin film device and the substrate and comprising multiple layers of material, each layer having a characteristic thickness and impedance and being composed of a non-lossless material, the characteristic thicknesses and impedances of the layers being adjusted to determine the input impedance presented to the thin film device, and thereby determining the acoustical coupling between the thin film device and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.