Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof
US5866092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1997 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Jun 2, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0036
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A garnet crystal for growing a substrate is used for manufacturing a magneto-optic element. The garnet crystal is grown by the Czochralski method and has a chemical structure represented by Gd.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The method of manufacturing the garnet crystal for growing a magneto-optic element includes the steps of: preparing a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible by mixing the oxides together in a weight ratio such that the atomic ratio is Gd:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5; heating the mixture to make a melt of the mixture; and growing a garnet from the melt of the mixture by the Czochralski method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.