Method of fabricating a compound semiconductor having a plurality of layers using a flow compensation technique
US5866198A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 1997 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | May 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vapor deposition device for fabricating a compound semiconductor has many organometallic gas supply systems, each of which for synthesizing and supplying more than one organometallic gas, a first group of valves connected to the organometallic gas supply systems, and the first group of valves for selecting a specific system from among the organometallic gas supply systems by opening and closing the relevant valve group, an organometallic gas supply line connected to the first valve group, a second group of valves connected to the first group of valves for selecting the next organometallic gas supply system to be used among the organometallic gas supply systems by opening and closing the relevant valve group, a vent line connected to the second valve group, a reaction furnace connected to the organometallic gas supply means for continuously propagating different types of thin-films by means of organometallic gases supplied from the organometallic gas supply line, a microcomputer system for controlling the operation of the first group of valves and the second group of valves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.