Gas sensor and method for fabricating same
US5866800A · kind A · utility
10Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1995 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Oct 26, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor and a method for fabricating the same includes a semiconductor substrate, a supporting layer formed on the semiconductor substrate, the supporting layer being electrically insulative and having a pattern groove formed therein, a heater formed in the pattern groove, an electrically insulating layer formed on the heater and the supporting layer, an electrode formed on the insulating layer, and a sensing layer formed on the electrode and the insulating layer to detect a target gas of interest according to a measured change in electrical conductivity or resistance thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.