Semiconductor device having a plug for diffusing hydrogen into a semiconductor substrate
US5866946A · kind A · utility
8Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1996 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | May 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device formed on a semiconductor substrate includes a layer which is substantially a barrier to hydrogen formed on the semiconductor substrate. A plug, formed of a material through which hydrogen can diffuse, is disposed in an opening through the layer and contacts a surface of the semiconductor substrate. Hydrogen may be diffused into the semiconductor substrate through the plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.