Method of manufacturing a group II-VI compound semiconductor
US5868834A · kind A · utility
9Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jun 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.