Method for fabricating dielectric device
US5868948A · kind A · utility
11Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Oct 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N15/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.