Metalization structure and manufacturing method thereof
US5868949A · kind A · utility
49Cited by
2References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1995 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Nov 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A metalization structure having a first conductor layer on the surface of an underlying layer and, further, a second conductor layer connected conductively with the first conductor layer in which a polyimide insulative film of low thermal expansion coefficient is present between at least an end of a pattern of the second conductor layer and the first conductor layer, for stably obtaining a metalization structure of high reliability and free from the worry of peeling of the conductor portion from a substrate or occurrence of cracking to the underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.