Multilayer emitter element and display comprising same
US5869169A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2495
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emitter element comprising a bottom layer of material shaping the overall emitter element, and a top layer of low work function material or otherwise of high electron emissivity characteristic. The low work function top layer preferably is shaped to a sharp point. The bottom layer may be formed of a material such as tantalum, molybdenum, gold, or silicon (or alloys thereof), and the top layer may be formed of a material such as Cr.sub.3 Si, Cr.sub.3 Si.sub.2, CrSI.sub.2, Nb.sub.3 Si.sub.2, Nb, Cr.sub.2 O.sub.3 or SiC. In a specific aspect, at least one of the first and second emitter materials is chromium oxide (Cr.sub.2 O.sub.3). In another variant, the first emitter material is an insulator of leaky dielectric, e.g., SiO with a 10-60% Cr by weight based on the weight of SiO, and the second emitter material is SiO+50-90% Cr by weight, based on the weight of SiO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.