Method for the production of a gate turn-off thyristor having an anode-side stop layer and a transparent anode emitter
US5869358A · kind A · utility
1Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Sep 4, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Sep 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A two-stage method is proposed for producing a highly transparent anode emitter (2) in a GTO (1). In a first step, an anode emitter (2) is indiffused whose thickness is greater than 0.5 .mu.m and whose doping concentration is greater than 10.sup.17 cm.sup.-3. In a second step, the emitter efficiency of the anode emitter (2) is subsequently reduced to a desired degree by local carrier life setting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.