Short pulsewidth, high pulse repetition frequency laser system
US5870421A · kind A · utility
37Cited by
9References
66Claims
0Family size
Inventor
Key dates
| Filing date | May 12, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | May 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/127
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser system capable of high speed silicon wafer dicing is disclosed. A laser with high average power, high repetition rate, ultra-short pulsewidth, and excellent beam quality is described. This is achieved by the use of high power diodes used to uniformly pump an improved Nd:YAlO.sub.3 crystal, resulting in a beam with excellent quality. In addition, a beta-barium borate (BBO) crystal, used in conjunction with drift step recovery diodes (DSRDs), forms a high speed optical switch which can be used to cavity dump the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.