Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
US5871630A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Jun 5, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.