Semiconductor structure ladder network configuration

US5872504A · kind A · utility

Assignee

• Deutsche ITT Industries, GmbH · DE

Inventors

• Norbert Greitschus · Balingen, DE
• Hans-Günter Zimmer · Denzlingen, DE

Key dates

• Filing date: Jan 13, 1997
• Grant date: Feb 16, 1999
• Expiry date: Jan 13, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/209

Abstract

A semiconductor structure for creating resistor networks, particularly ladder networks, has resistive sections made of semiconductor material and metal contact areas. A continuous semiconducting resistor strip is provided as a primary arm. Along this continuous primary arm, metal contact areas which contact the resistor strip at the side are provided in accordance with the desired resistor ratio and in order to form corresponding series resistors. In a ladder network, shunt arms have one end connected directly to the long side of the primary arm via the semiconductor material. At the other end of each of the shunt arms, a respective metal contact area is provided.