Semiconductor memory device having voltage converters
US5872741A · kind A · utility
2Cited by
7References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Nov 28, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device has a voltage converter for converting a voltage level of an internal clock signal to obtain a high voltage level clock signal. The high level clock signal accelerates the transmission of the clock signal to latch circuits which control the output transistors of the memory device. Another voltage converter is disposed between the data amplifier and the latch circuit instead of the output of the latch circuit, for prevention of current flowing through both the output transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.