Chemical sensors, in particular silicon-based biosensors
US5874047A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Feb 5, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/5438
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A three-dimensional structure of porous silicon considerably improves the anchorage of sensor-active material such as, for example, enzymes, antibodies, etc., on or in the substrate surface of chemical sensors, in particular silicon-based biosensors. This structure is produced by means of suitable etching which forms pore apertures adapted to the penetrability of the sensor-active material. The pore walls advantageously receive a non-conductive boundary layer which consists of oxides of Si and/or Al or Ta or silicon nitride and are preferably 1-100 nm thick. The porous layer is advantageously between 10 nm and 100 .mu.m thick and the pores are preferably in the form of branched ducts whose average diameter is 1 nm-10 .mu.m and in particular 10-1000 nm. The sensor-active material can optionally be distributed in a glass, solid, plastics or polymer membrane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.