Method of producing MIS transistors having a gate electrode of matched conductivity type
US5874352A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1995 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Oct 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an MIS transistor by preparing a substrate formed with a gate electrode and a semiconductor layer which defines a source region and a drain region, removing a natural oxide film from a surface of the gate electrode and from a surface of the semiconductor layer to expose an active surface, delivering a source gas containing an impurity component to the exposed active surface to deposit thereon an impurity adsorption film, and annealing the substrate to diffuse the impurity component from the impurity adsorption film into the gate electrode and concurrently into the semiconductor layer to form the source and drain regions. The gate electrode has the same conductivity type as the source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.