Semiconductor wafer etching method
US5874365A · kind A · utility
12Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1994 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Oct 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/928
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.