Ferroelectric semiconductor device and method of manufacture
US5874755A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1996 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Nov 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/701
Abstract
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (13) of ferroelectric material disposed on a semiconductor substrate (11) and a gate electrode (17) formed on a portion (26) of the layer (13) of ferroelectric material. The portion (26) of the layer (13) of ferroelectric material sandwiched between a semiconductor substrate (11) and a gate electrode (17) retains its ferroelectric activity. The portions (21, 22) of the layer (13) of ferroelectric material adjacent the portion (26) are damaged and thereby rendered ferroelectrically inactive. A source contact (31) and a drain contact (32) are formed through the damaged portions (21, 22) of the layer (13) of ferroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.