Voltage transferring device capable of holding boost voltage and transferring in high speed boost voltage
US5874855A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Apr 7, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/247
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
In a voltage transferring device connected between a voltage supplying section and a voltage receiving section, the voltage supplying section supplies, in a transferring period, a boost voltage having a boost level to the voltage receiving section. The voltage supplying section has, in a non-transferring period, a non-transferring voltage which has a non-transferring level smaller than the boost level. A transferring field effect transistor has a source electrode connected to the voltage supplying section and a drain electrode connected to the voltage receiving section. A controlling circuit is connected to a substrate electrode of the transferring FET. The voltage controlling circuit supplies, in the transferring period, a high voltage having the boost level to the substrate electrode of the transferring FET. The controlling circuit supplies, in the non-transferring period, a low voltage having the non-transferring level to the substrate electrode of the transferring FET. The controlling circuit comprises first and second FETs. The first FET has a drain electrode connected to the source electrode of the transferring FET and a source electrode connected to the substrate electrode o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.