Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials
US5875052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Sep 5, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/24322
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Spatially localized radiation, preferably ultraviolet visible radiation, representing information is impinged onto a spatially localized area of a heterostructure comprising a ternary Group III-V Nitride semiconductor material. It has been found that the spatially localized optical radiation reversibly changes the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area, to thereby provide an optical memory. The stored information can be read from the memory by impinging blanket radiation, preferably ultraviolet radiation of the same frequency which was used to write the information, onto the heterostructure comprising ternary Group III-V Nitride semiconductor material including onto the spatially localized area thereof. Simultaneously, the changes in the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area as a result of the impinged blanket radiation are detected, to thereby read the information. Thus, high density, high contrast patterns can be written in spatially localized areas of a heterostructure comprising ternary Group III-V Nit…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.