Crystal orientation detectable semiconductor substrate, and methods of manufacturing and using the same
US5876819A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1995 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Nov 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/219
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.