Method for forming a metallic barrier layer in semiconductor device
US5877031A · kind A · utility
1Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1995 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Jul 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusing of the Si atoms between metal layers, the method comprising the steps of: forming a TiN film through a sputtering equipment using Ar and N.sub.2 gas; implanting N.sub.2 O gas on the upper part of the TiN film; and annealing the resulting structure at N.sub.2 atmosphere for diffusing oxygen ions, thereby forming said resulting structure into uniform TiNO film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.