Method of making charge-coupled device with microlens
US5877040A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1997 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | May 7, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.