Masking methods during semiconductor device fabrication
US5877071A · kind A · utility
2Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1996 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Sep 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing an oxide mask during fabrication of semiconductor devices which includes providing a providing a III-V compound semiconductor substrate having a surface, the surface having a growth area and a masked area masked by an oxide film formed on the surface thereof. The oxide film is removed with a Trisdimethylamino group V compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.