Method for fabricating a silicon-on-sapphire wafer
US5877094A · kind A · utility
24Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1994 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Apr 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a silicon-on-sapphire wafer for processing by silicon-wafer-processing equipment. A layer is deposited on a backside of a silicon-on-sapphire wafer, the layer having optical and electrical properties of silicon, wherein the silicon-on-sapphire wafer may be sensed by a sensor designed to sense a presence of a silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.