Bonding of silicon carbide directly to a semiconductor substrate by using silicon to silicon bonding
US5877516A · kind A · utility
27Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1998 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Mar 20, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A module and a method of making the module is disclosed. The module is formed from a semiconductor substrate and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.